Features

FPA-6300ES6a scanners deliver High-Productivity

Processing time was reduced by speeding up the exposure process with a new-design Reticle & Wafer Stages,

by improving alignment sequences and wafer handling time reduction. The throughput of the FPA-6300ES6a

is over *200 wph (wafers per hour) which is 1.6 times higher productivity than previous FPA-6000ES6a model scanners.

*300 mm (12 inch) wafer, 98 shots, with Options applied

FPA-6300ES6a scanners realize industry-leading Overlay Accuracy

To minimize overlay misalignment & intrafield distortion during exposure, advanced stage vibration & synchronous

control technologies were adopted in the FPA-6300ES6a. The alignment scope was also improved in order to measure

the alignment marks on a wafer more accurately.

Furthermore, by accurately controlling the temperature of the exposure area and the reticle area, **industry-leading

Mix & Match overlay accuracy of ≤ 5nm has been realized.

**as of December 14, 2016 (Examination by Canon), with Options applied

FPA-6300ES6a scanners provide high-reliability

The FPA-6300ES6a platform provides substantial improvements in terms of base durability and maintenance requirements,

as well as reduced install times and increased system uptime and availability when compared to earlier FPA-6000 Platform scanners.

FPA-6300ES6a options and upgrades further improve overlay accuracy and productivity, offering scalability to support next-generation

semiconductor manufacturing.

Specifications

Resolution：≦ 90 nm

NA (Numerical Aperture)：0.86~0.50 (Variable)

Reduction Ratio：1:4

Field Size：26 mm x 33 mm

Exposure Wavelength：KrF 248 nm

Reticle Size：6 inch

Wafer Size：200 mm (8 inch), 300 mm (12 inch) (Selection)

Overlay Accuracy：≦ *5 nm

Main Body Dimensions：(W) 2,300 x (D) 5,155 x (H) 2,900 mm