VPO-300, VPO-300-HV

● Vacuum Process Oven

● Programmable temperature profiles

● Record of process data

● Process in different gas atmospheres

● Perfect lab tool due to small dimensions and weight

The VPO-300 Vacuum Process Oven

The VPO-300 Vacuum Process Oven refers to a semiconductor manufacturing process which heats silicon wafers to high tem peratures (up to 1000 °C or 1200 °C) on a timescale of several seconds or less. During cooling, however, wafer temperatures must be brought down slowly to prevent dislocations and wa fer breakage due to thermal shock. Such rapid heating rates are often attained by high intensity lamps. These processes are used for a wide variety of applications in

• semiconductor manufacturing

• dopant activation

• thermal oxidation

• metal reflow and chemical

• vapor deposition

Application

The VPO-300 Vacuum Process Oven is an excellent tool for var ious semiconductor processes with up to 300 mm wafer or 300 mm x 300 mm substrate size. Some examples for applications:

Laboratory furnace for all kind of developers implementing and researching new processes, prototype research, environ mental research purposes and for small preseries or series.

Process Gases

The VPO-300 can be used with standard process gases, like

Nitrogen, Oxygen, Forming Gas. The chamber is sealed and can easily be cleaned.

Gas flow control

One gas line with Mass Flow Controller (MFC) for Nitrogen

(5 nlm = norm liter per minute) is default, three more gas lines (Option: MFC) are possible.

Vacuum

The system is vacuum capable of up to 10-3 hPa (optionally up to 10-6 hPa).