0769-2223 1935
Crestec CABL-AP（50kV）EBL电子束光刻机
It is the best model for production of DFB-Laser diode for optical communication devices and for Academic and R&D as well. We realize high resolution and high throughput with 50kV.
Beam diameter: < 2 nmΦ (for Academic and R&D)
< 4 nmΦ (for Production)
Accerelation voltage: 50kV, 30kV
Stage size: 4 inch, 6 inch ,8 inch wafer model
产品描述
Special Features
◆ TFE 50kV
◆ High resolution as same as 100kV
◆ High accurate stitch writing for long time by specially designed laser interferometer
◆ Multi-user environment (PC controlled EOC = Recipe)
◆ Self environment control - Thermal & noise free
◆ Flexible writing methods (vector, vector R-theta, raster, spot, axial symmetrical, field size modulation, multi-mode, 3D)
Specifications
|
Electron Emitter/ |
TFE (ZrO/W)/5 to 50kV |
|
Min. beam diameter |
2.0nm (for Academic and R&D) |
|
Scan method |
Vector scan (x, y) (Standard) |
|
Advanced lithography |
Field size modulation lithography, axial symmetry pattern lithography |
|
Field size |
sq. 30μm - sq. 1000μm (50kV) (for Academic and R&D) |
|
Work piece size |
4，6，8inchΦ |
|
CAD software |
Dedicated CAD (Standard), GDS II conversion (Optional), |
|
OS |
Windows |
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